Room temperature low-threshold CW operation of 1.23μm GaAsSbVCSELs on GaAs substrates

被引：72

作者：

Yamada, M

Anan, T

Kurihara, K

Nishi, K

Tokutome, K

Kamei, A

Sugou, S

机构：

[1] NEC Lab, Opt Interconnect, Real World Comp Partnership, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 07期

关键词：

D O I：

10.1049/el:20000483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature (RT) continuous-wave (CW) operation of vertical-cavity surface-emitting lasers (VCSELs) with GaAsSb quantum wells on GaAs substrates has been demonstrated. A 6 x 6 mu m(2) oxide-confined device exhibited RT-CW lasing with a threshold current of 0.7mA at 1.23 mu m, which is the longest reported wavelength of GaAs-based VCSELs yet reported.

引用

页码：637 / 638

页数：2

共 6 条

[1] Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers [J].

Anan, T ;

Yamada, M ;

Tokutome, K ;

Sugou, S ;

Nishi, K ;

Kamei, A .

ELECTRONICS LETTERS, 1999, 35 (11) :903-904

[2] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[3] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Nakahara, K ;

Tamura, K ;

Inoue, H ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190

[4] Sealing of AlAs against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers [J].

Lim, DH ;

Yang, GM ;

Kim, JH ;

Lim, KY ;

Lee, HJ .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :1915-1917

[5] 1.3 μm continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition [J].

Sato, S ;

Satoh, S .

ELECTRONICS LETTERS, 1999, 35 (15) :1251-1252

[6]

Yamada M., 1998, Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), P149, DOI 10.1109/LEOS.1998.737775

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