Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers

被引：47

作者：

Anan, T

Yamada, M

Tokutome, K

Sugou, S

Nishi, K

Kamei, A

机构：

[1] Opt Interconnect NEC Lab, RWCP, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 11期

关键词：

D O I：

10.1049/el:19990633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 mu m with a threshold current of 20mA for devices with 25 mu m square mesa.

引用

页码：903 / 904

页数：2

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