Sealing of AlAs against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers

被引：12

作者：

Lim, DH ^{[1
]}

Yang, GM ^{[1
]}

Kim, JH ^{[1
]}

Lim, KY ^{[1
]}

Lee, HJ ^{[1
]}

机构：

[1] CHONBUK NATL UNIV,SEMICOND PHYS RES CTR,CHONJU 561756,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 14期

关键词：

D O I：

10.1063/1.119979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the process of sealing an exposed AlAs to prevent further wet oxidation. A critical step in this sealing process consists of the first wet oxidation for a short time at 408 degrees C in a steam environment of a previously room-ambient exposed AlAs surface. During this brief wet oxidation, a dense oxide surface barrier with a thickness of 1.1 mu m is formed, which further blocks diffusing oxygen species during the second wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers. (C) 1997 American Institute of Physics.

引用

页码：1915 / 1917

页数：3

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