ALXGA1-XAS-GAAS-INYGA1-YAS QUANTUM-WELL HETEROSTRUCTURE LASERS WITH NATIVE-OXIDE CURRENT-BLOCKING WINDOWS FORMED ON METALLIZED DEVICES

被引：8

作者：

MARANOWSKI, SA ^{[1
]}

CHEN, EI ^{[1
]}

HOLONYAK, N ^{[1
]}

RICHARD, TA ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating improved laser operation of AlxGa1-xAs-GaAs-InyGa1-yAs quantum well heterostructures modified with buried native oxide current-blocking windows. The windows are formed by low temperature (425-degrees-C) anisotropic ''wet'' oxidation of an Al0.9Ga0.1As layer exposed at the facets of metallized laser bars. These window devices operate continuously to powers as high as 248 mW/facet (uncoated, approximately 10.5 mum aperture), a apoproximately 25% improvement over nonwindow devices.

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页码：2151 / 2153

页数：3

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