Comparison of optical losses in dielectric-apertured vertical-cavity lasers

被引:18
作者
Floyd, PD [1 ]
Thibeault, BJ [1 ]
Hegblom, ER [1 ]
Ko, J [1 ]
Coldren, LA [1 ]
Merz, JL [1 ]
机构
[1] UNIV NOTRE DAME,DEPT ELECT ENGN,NOTRE DAME,IN 46556
关键词
D O I
10.1109/68.491548
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of vertical-cavity lasers (VCL's) employing dielectric apertures formed by lateral oxidation or wetetch undercutting of an AlAs layer on a common substrate are compared, Although both device types performed well, extracted optical losses from the wet-etch undercut structures exceed those of AlAs-oxide apertured lasers, The difference in performance is attributed to optical scattering losses specific to the aperture fabrication method, enhanced by loss from the larger index of refraction discontinuity of the air-gap aperture relative to the AlAs-oxide aperture.
引用
收藏
页码:590 / 592
页数:3
相关论文
共 15 条
  • [1] COLDREN LA, 1995, 10 INT C INT OPT OPT
  • [2] FLOYD PD, IN PRESS ELECT LETT
  • [3] HADLEY GR, 1995, APPL OPTICS, V20, P1483
  • [4] RECORD LOW-THRESHOLD INDEX-GUIDED INGAAS/GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A NATIVE-OXIDE CONFINEMENT STRUCTURE
    HAYASHI, Y
    MUKAIHARA, T
    HATORI, N
    OHNOKI, N
    MATSUTANI, A
    KOYAMA, F
    IGA, K
    [J]. ELECTRONICS LETTERS, 1995, 31 (07) : 560 - 562
  • [5] HEGBLOM ER, IN PRESS APPL PHYS L
  • [6] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS
    HUFFAKER, DL
    DEPPE, DG
    KUMAR, K
    ROGERS, TJ
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (01) : 97 - 99
  • [7] SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 50-PERCENT POWER CONVERSION EFFICIENCY
    LEAR, KL
    CHOQUETTE, KD
    SCHNEIDER, RP
    KILCOYNE, SP
    GEIB, KM
    [J]. ELECTRONICS LETTERS, 1995, 31 (03) : 208 - 209
  • [8] LEAR KL, 1995 IEEE LAS EL OPT
  • [9] POLARIZATION AND MODAL BEHAVIOR OF LOW-THRESHOLD OXIDE AND AIRGAP CONFINED VERTICAL-CAVITY LASERS
    LI, GS
    LIM, SF
    YUEN, W
    CHANGHASNAIN, CJ
    [J]. ELECTRONICS LETTERS, 1995, 31 (23) : 2014 - 2015
  • [10] ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY
    LI, GS
    YUEN, W
    TOH, K
    ENG, LE
    LIM, SF
    CHANGHASNAIN, CJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (09) : 971 - 973