Lateral wet oxidation of AlxGa1-xAs-GaAs depending on its structures

被引：44

作者：

Kim, JH ^{[1
]}

Lim, DH ^{[1
]}

Kim, KS ^{[1
]}

Yang, GM ^{[1
]}

Lim, KY ^{[1
]}

Lee, HJ ^{[1
]}

机构：

[1] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,JEONJU 561756,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of similar to 11 nm. Also, the oxidation rate of AlxGa1-xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on bath sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. (C) 1996 American Institute of Physics.

引用

页码：3357 / 3359

页数：3

共 18 条

[1]

BLUM O, 1996, CTHQ5 CLEO

[2] WET THERMAL-OXIDATION OF ALXGA1-XAS COMPOUNDS [J].

BURTON, RS ;

SCHLESINGER, TE .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5503-5507

[3] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[4] FABRICATION AND PERFORMANCE OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].

CHOQUETTE, KD ;

LEAR, KL ;

SCHNEIDER, RP ;

GEIB, KM ;

FIGIEL, JJ ;

HULL, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1237-1239

[5] NATIVE-OXIDE STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

DALLESASSE, JM ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :394-396

[6] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[7]

GUHA S, 1996, APPL PHYS LETT, V98, P906

[8] Estimation of scattering losses in dielectrically apertured vertical cavity lasers [J].

Hegblom, ER ;

Babic, DI ;

Thibeault, BJ ;

Coldren, LA .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1757-1759

[9] THRESHOLD CHARACTERISTICS OF PLANAR AND INDEX-GUIDED MICROCAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

SHIN, J .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :4-6

[10] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

KUMAR, K ;

ROGERS, TJ .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :97-99

← 1 2 →