Magnetron sputtering of Ti3SiC2 thin films,from a compound target

被引:59
作者
Eklund, P. [1 ]
Beckers, M. [1 ]
Frodelius, J. [1 ]
Hogberg, H. [1 ]
Hultman, L. [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol, Thin Film Phys Div, IFM, S-58183 Linkoping, Sweden
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2007年 / 25卷 / 05期
关键词
D O I
10.1116/1.2757178
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ti3SiC2 thin films were synthesized by magnetron sputtering from Ti3SiC2 and Ti targets. Sputtering from a Ti3SiC2 target alone resulted in films with a C content of similar to 50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3SiC2 target is shown to bind the excess C in TiCx intergrown with Ti3SiC2 and Ti4SiC2. Additionally, a substoichiometric TiC, buffer layer is shown to serve as a C sink and enable the growth of Ti3SiC2. (c) 2007 American Vacuum Society.
引用
收藏
页码:1381 / 1388
页数:8
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