Properties of annealed anodically etched porous Zn studied by scanning tunneling microscopy

被引：8

作者：

Chang, SS

Kurokawa, S

Sakai, A

机构：

[1] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, South Korea

[2] Kyoto Univ, Int Innovat Ctr, Sakyo Ku, Kyoto 6068501, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 217卷 / 1-4期

关键词：

ZnO; anodic etching; annealing; scanning tunneling microscopy; scanning tunneling spectroscopy;

D O I：

10.1016/S0169-4332(02)01410-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the annealing behavior of anodically etched porous Zn (p-Zn) as a function of annealing time. It is found that 10 min ambient air annealing of Zn yields efficient UV luminescence with a very weak deep-level defect-related luminescence. The emergence of the green luminescence band is observed with an increase of annealing time. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) have been performed on annealed p-Zn. STM studies reveal a more smooth surface for p-Zn annealed for a short period. STS analysis shows a good agreement with observed PL spectra, especially concerning the existence or absence of defect-related luminescence. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：50 / 55

页数：6

共 21 条

[1] Optically pumped lasing of ZnO at room temperature [J].