Luminescence properties of Zn nanowires prepared by electrochemical etching

被引:99
作者
Chang, SS [1 ]
Yoon, SO
Park, HJ
Sakai, A
机构
[1] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, Kangwon Do, South Korea
[2] Hankuk Univ Foreign Studies, Fac Nat Sci, Seoul 130791, South Korea
[3] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan
关键词
ultraviolet emission; nanowires; photoluminescence; ZnO;
D O I
10.1016/S0167-577X(01)00521-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have prepared samples of Zn wire structures by electrochemical anodization and measured their photoluminescence spectra at various temperatures. Scanning electron micrographs (SEM) were also taken on these samples. It was found that the dimension of the Zn wires has a definite influence on the photoluminescence (PL) spectra. Specifically, large wire dimensions exhibit a blue/violet luminescence. In addition to this blue/violet luminescence. nanowires of Zn about 20 nm in diameter exhibit a PL peak at 379 nm, which is the characteristic of ZnO. Low-temperature PL measurements on these Zn nanowires reveal three distinct excitonic emission peaks similar to high-quality ZnO. These results strongly suggest that high-quality ZnO nanowires can be formed by electrochemical etching of Zn. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:432 / 436
页数:5
相关论文
共 21 条
  • [1] LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE
    BETHKE, S
    PAN, H
    WESSELS, BW
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 138 - 140
  • [2] OPTICAL AND ELECTRICAL-PROPERTIES OF RADICAL BEAM GETTERING EPITAXY GROWN N-TYPE AND P-TYPE ZNO SINGLE-CRYSTALS
    BUTKHUZI, TV
    BUREYEV, AV
    GEORGOBIANI, AN
    KEKELIDZE, NP
    KHULORDAVA, TG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 366 - 369
  • [3] Luminescence properties of anodically etched porous Zn
    Chang, SS
    Yoon, SO
    Park, HJ
    Sakai, A
    [J]. APPLIED SURFACE SCIENCE, 2000, 158 (3-4) : 330 - 334
  • [4] Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
    Hamdani, F
    Yeadon, M
    Smith, DJ
    Tang, H
    Kim, W
    Salvador, A
    Botchkarev, AE
    Gibson, JM
    Polyakov, AY
    Skowronski, M
    Morkoc, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 983 - 990
  • [5] Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
    Hamdani, F
    Botchkarev, A
    Kim, W
    Morkoc, H
    Yeadon, M
    Gibson, JM
    Tsen, SCY
    Smith, DJ
    Evans, K
    Litton, CW
    Mitchel, WC
    Hemenger, P
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (04) : 467 - 469
  • [6] SIZE-DEPENDENT REDOX POTENTIALS OF QUANTIZED ZINC-OXIDE MEASURED WITH AN OPTICALLY TRANSPARENT THIN-LAYER ELECTRODE
    HOYER, P
    WELLER, H
    [J]. CHEMICAL PHYSICS LETTERS, 1994, 221 (5-6) : 379 - 384
  • [7] Characterization of transparent zinc oxide films prepared by electrochemical reaction
    Izaki, M
    Omi, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (06) : 1949 - 1952
  • [8] MBE growth and properties of ZnO on sapphire and SiC substrates
    Johnson, MAL
    Fujita, S
    Rowland, WH
    Hughes, WC
    Cook, JW
    Schetzina, JF
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 855 - 862
  • [9] Electrical and optical properties of ZnO:Al films prepared by an evaporation method
    Ma, J
    Ji, F
    Ma, HL
    Li, SY
    [J]. THIN SOLID FILMS, 1996, 279 (1-2) : 213 - 215
  • [10] ZINC-OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM ZINC ACETATE
    MARUYAMA, T
    SHIONOYA, J
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (03) : 170 - 172