Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

High quality GaN epilayers have been grown on oxygen and zinc surfaces of ZnO (0001) substrates by reactive molecular beam epitaxy and the effect of the intermediate buffer layer on the structural and optical properties of the GaN films has been investigated. The optical and structural characterization of the GaN epilayers and ZnO substrates were performed using photoluminescence, reflectivity, x-ray double diffraction, atomic force microscopy, and transmission electron microscopy. The optical results indicated that GaN was grown with compressive strain due to the difference in thermal expansion coefficient between GaN and ZnO. The surface roughness has been reduced by using an intermediate low temperature GaN buffer layer. The low temperature photoluminescence spectra of GaN/ZnO epilayers did not reveal any sign of the well-known midgap yellow signal. Linear polarized reflectivity and photoluminescence indicated that GaN epilayer planes were not misoriented with respect to the ZnO substrate planes: this result was confirmed by x-ray double diffraction measurements. (C) 1998 American Institute of Physics. [S0021-8979(98)05402-4].