Soft errors in advanced computer systems

被引:559
作者
Baumann, R [1 ]
机构
[1] Texas Instruments Inc, Silicon Technol Dev Component Reliabil Grp, Dallas, TX 75243 USA
来源
IEEE DESIGN & TEST OF COMPUTERS | 2005年 / 22卷 / 03期
关键词
D O I
10.1109/MDT.2005.69
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This article comprehensively analyzes soft-error sensitivity in modern systems and shows it to be application dependent. The discussion covers ground-level radiation mechanisms that have the most serious impact on circuit operation, along with the effect of technology scaling on soft-error rates in memory and logic. © 2005 IEEE.
引用
收藏
页码:258 / 266
页数:9
相关论文
共 19 条
[1]  
Anghel L., 2000, Proceedings Design, Automation and Test in Europe Conference and Exhibition 2000 (Cat. No. PR00537), P591, DOI 10.1109/DATE.2000.840845
[2]  
BAUMANN R, 1995, 1995 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 33RD ANNUAL, P297, DOI 10.1109/RELPHY.1995.513695
[3]   Neutron-induced 10B fission as a major source of soft errors in high density SRAMs [J].
Baumann, RC ;
Smith, EB .
MICROELECTRONICS RELIABILITY, 2001, 41 (02) :211-218
[4]   A digital CMOS design technique for SEU hardening [J].
Baze, MP ;
Buchner, SP ;
McMorrow, D .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2603-2608
[5]  
BESSOT D, 1993, P 2 EUR C RAD ITS EF, P563
[6]   Comparison of error rates in combinational and sequential logic [J].
Buchner, S ;
Baze, M ;
Brown, D ;
McMorrow, D ;
Melinger, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :2209-2216
[7]   Upset hardened memory design for submicron CMOS technology [J].
Calin, T ;
Nicolaidis, M ;
Velazco, R .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :2874-2878
[8]   SRAM SER in 90,130 and 180 nm bulk and SOI technologies [J].
Cannon, EH ;
Reinhardt, DD ;
Gordon, MS ;
Makowenskyj, PS .
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, :300-304
[9]   Production and propagation of single-event transients in high-speed digital logic ICs [J].
Dodd, PE ;
Shaneyfelt, MR ;
Felix, JA ;
Schwank, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3278-3284
[10]   Basic mechanisms and modeling of single-event upset in digital microelectronics [J].
Dodd, PE ;
Massengill, LW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) :583-602