Upset hardened memory design for submicron CMOS technology

被引：832

作者：

Calin, T ^{[1
]}

Nicolaidis, M ^{[1
]}

Velazco, R ^{[1
]}

机构：

[1] LSR,IMAG LAB,F-38031 GRENOBLE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel design technique is proposed for storage elements which are insensitive to radiation-induced single-event upsets. This technique is suitable for implementation in high density ASICs and static RAMs using submicron CMOS technology.

引用

页码：2874 / 2878

页数：5

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