Structural morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperature

被引：49

作者：

Caliendo, C

Imperatori, P

Cianci, E

机构：

[1] CNR, Ist Acust, I-00133 Rome, Italy

[2] CNR, Ist Struttura Mat, I-00016 Monterotondo, Rome, Italy

[3] CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy

来源：

THIN SOLID FILMS | 2003年 / 441卷 / 1-2期

关键词：

aluminum nitride; sputtering; X-ray diffraction; piezoelectric effects;

D O I：

10.1016/S0040-6090(03)00911-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline AIN thick films were deposited on Si(001) and Si(Ill) substrates by reactive radio frequency sputtering technique at low temperature. The structure and the morphology of the films were investigated by X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques. These measurements showed that the AIN films were highly c-axis oriented, with low surface roughness. The surface acoustic wave (SAW) properties of the films were investigated: a mean value of 3.8 x 10(-12) C/N was estimated for the piezoelectric strain constant d(33); the phase velocities of SAWs propagating in polycrystalline AlN/(001)[110]Si and AlN/(111)[1-10]Si structures, for different film thicknesses, were calculated and found to be in good agreement with the theoretical velocities evaluated for SAWs propagating in single crystal AlN/Si structures. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：32 / 37

页数：6

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