The effect of radiation induced defects on the performance of high resistivity silicon diodes

被引：10

作者：

Matheson, J ^{[1
]}

Robbins, M ^{[1
]}

Watts, S ^{[1
]}

机构：

[1] BRUNEL UNIV, DEPT PHYS, UXBRIDGE UB8 3PH, MIDDX, ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 377卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(95)01413-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep accepters is described.

引用

页码：224 / 227

页数：4

共 8 条

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