Monoclinic carbon nitride phase coherently grown on Si (001) substrates

被引：6

作者：

Barucca, G

Majni, G

Mengucci, P

Leggieri, G ^{[1
]}

Martino, M

机构：

[1] Ist Nazl Fis Mat, Dipartimento Fis, I-73100 Lecce, Italy

[2] Ist Nazl Fis Mat, Dipartimento Sci Mat & Terra, I-60131 Ancona, Italy

[3] Univ Ancona, I-60131 Ancona, Italy

[4] Univ Lecce, I-73100 Lecce, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.1347954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nitride films deposited on Si (001) substrates at room temperature by XeCl laser ablation of graphite targets in low pressure (1, 5, 10 and 50 Pa) N-2 atmosphere at fluence of 12 J/cm(2) (similar to0.4 GW/cm(2)) have been investigated by x-ray diffraction and transmission electron microscopy in order to study the structure of the films. The results showed that the samples are constituted of a continuous amorphous film inside which microcrystals of a coherently grown CNx phase are dispersed. This phase is monoclinic with the following lattice parameters: a=b=0.384 nm, c=0.302 nm, alpha=gamma =90 degrees, and beta =96.5 degrees. The CNx phase grows with the (001) plane coincident with the (001) plane of the Si substrate and with the [010](CNx) direction parallel to the [110](Si) one. (C) 2001 American Institute of Physics.

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页码：3494 / 3497

页数：4

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