Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

被引：92

作者：

Yu, LS ^{[1
]}

Qiao, DJ

Xing, QJ

Lau, SS

Boutros, KS

Redwing, JM

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Epitron ATMI, Phoenix, AZ 85027 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions. (C) 1998 American Institute of Physics. [S0003-6951 (98)03528-1].

引用

页码：238 / 240

页数：3

共 16 条

[1] Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures [J].

Alause, H ;

Knap, W ;

Azema, SC ;

Bluet, JM ;

Sadowski, ML ;

Huant, S ;

Young, J ;

Khan, MA ;

Chen, Q ;

Shur, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :79-83

[2]

BINARI SC, 1994, ELECTRON LETT, V30, P289

[3] High transconductance heterostructure field-effect transistors based on AlGaN/GaN [J].

Chen, Q ;

Khan, MA ;

Yang, JW ;

Sun, CJ ;

Shur, MS ;

Park, H .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :794-796

[4] ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES [J].

CHIN, VWL ;

TANSLEY, TL ;

OSTOCHAN, T .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7365-7372

[5] Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure [J].

Contreras, S ;

Knap, W ;

Skierbisewski, C ;

Alause, H ;

Robert, JL ;

Khan, MA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :92-95

[6] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].

CROWELL, CR ;

HOWARTH, LE ;

SPITZER, WG ;

LABATE, EE .

PHYSICAL REVIEW, 1962, 127 (06) :2006-&

[7] Effects of annealing on Ti Schottky barriers on n-type GaN [J].

Hirsch, MT ;

Duxstad, KJ ;

Haller, EE .

ELECTRONICS LETTERS, 1997, 33 (01) :95-96

[8]

Khan MA, 1996, APPL PHYS LETT, V68, P3022, DOI 10.1063/1.116684

[9] Thermally stable PtSi Schottky contact on n-GaN [J].

Liu, QZ ;

Yu, LS ;

Lau, SS ;

Redwing, JM ;

Perkins, NR ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1275-1277

[10]

LIU QZ, IN PRESS J APPL PHYS

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