Effects of annealing on Ti Schottky barriers on n-type GaN

被引：34

作者：

Hirsch, MT ^{[1
]}

Duxstad, KJ ^{[1
]}

Haller, EE ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 01期

关键词：

gallium nitride; Schottky barriers; annealing;

D O I：

10.1049/el:19970021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors ivestigate the Schottky barrier heights of Ti films deposited on n-type GaN. The effective barrier height Phi(b0) is measured by current-voltage measurements, against temperature. An increasing barrier height Phi(b0) from similar to 200meV (as-deposited) to 250meV after annealing at temperatures as low as 60 degrees C is observed. After annealing at 230 degrees C and above, a stable Phi(b0) of 450meV is measured. The increase in Phi(b0) is not due to any macroscopic interfacial reaction.

引用

页码：95 / 96

页数：2

共 9 条

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