High temperature characteristics of Pd Schottky contacts on n-type GaN

被引：45

作者：

Schmitz, AC

Ping, AT

Khan, MA

Chen, Q

Yang, JW

Adesida, I

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] APA OPT INC,BLAINE,MN 55449

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 19期

关键词：

gallium nitride; Schottky barriers;

D O I：

10.1049/el:19961191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High temperature current-voltage characteristics of Pd Schottky contacts on n-type GaN have been investigated up to 500 degrees C. The effects of high temperature annealing on barrier height and the ideality factor of the Schottky contacts were investigated. From the trend of barrier height and ideality, Pd metal is suitable as the gate metal of GaN-based FETs for temperatures below 300 degrees C.

引用

页码：1832 / 1833

页数：2

共 8 条

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