Characterisation of Pd Schottky barrier on n-type GaN

被引：52

作者：

Ping, AT ^{[1
]}

Schmitz, AC ^{[1
]}

Khan, MA ^{[1
]}

Adesida, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 01期

关键词：

Schottky barriers; gallium nitride;

D O I：

10.1049/el:19960029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was similar to 1.04. The effective Richardson constant was determined to be similar to 3.24Acm(-2)K(-2) using the modified Norde plot. These values were also compared to Au Schottky contacts.

引用

页码：68 / 70

页数：3

共 6 条

[1] ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
BINARI, SC
DIETRICH, HB
KELNER, G
ROWLAND, LB
DOVERSPIKE, K
GASKILL, DK
[J]. ELECTRONICS LETTERS, 1994, 30 (11) : 909 - 911
[2] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY
HACKE, P
DETCHPROHM, T
HIRAMATSU, K
SAWAKI, N
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2676 - 2678
[3] LIDE DR, 1992, CRC HDB CHEM PHYSICS
[4] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
NAKAMURA, S
MUKAI, T
SENOH, M
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (13) : 1687 - 1689
[5] Schroder D.K., 1990, SEMICONDUCTOR MAT DE, P153
[6] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266

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