SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：261

作者：

HACKE, P

DETCHPROHM, T

HIRAMATSU, K

SAWAKI, N

机构：

[1] Nagoya University, School of Engineering, Department of Electronics, Chikusa-ku

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 19期

关键词：

D O I：

10.1063/1.110417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n is similar to 1.03 and the reverse bias leak current below 1 X 10(-10) A at a reverse bias of -10 V. The barrier height phi(Bn) was determined to be 0.844 and 0.94 eV by current-voltage and capacitance measurements, respectively.

引用

页码：2676 / 2678

页数：3

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