IMPLANTATION OF N-14+ INTO MONOCRYSTALLINE GAN FILMS

[1] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 727 - +

[2] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[3] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[5] ON THE POSSIBILITY OF SUPERCONDUCTION IN GAN [J]. PHYSICS LETTERS, 1964, 12 (03): : 167 - 167

[6] RABENAU A, 1962, PREPARATION 3 5 COMP

[7] FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (01) : 11 - &

[8] SAXENA AN, 1971, 4 AM IS SEP S NBS WA

[9] GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND CORUNDUM SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 158 - +

[1] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 727 - +

[2] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[3] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[5] ON THE POSSIBILITY OF SUPERCONDUCTION IN GAN [J]. PHYSICS LETTERS, 1964, 12 (03): : 167 - 167

[6] RABENAU A, 1962, PREPARATION 3 5 COMP

[7] FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (01) : 11 - &

[8] SAXENA AN, 1971, 4 AM IS SEP S NBS WA

[9] GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND CORUNDUM SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 158 - +