FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON

被引：6

作者：

SAXENA, AN

机构：

[1] Research and Development Laboratories, Sprague Electric Company, North Adams

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 01期

关键词：

D O I：

10.1063/1.1652637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analysis of the forward current-voltage data for a temperature range of 77.2°to 423°K on a CrSingle Bond signSi (ND = 7 × 1018 cm-3) Schottky barrier diode is given. The I-V behavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more recent calculations of Padovani and Stratton, and of Crowell and Rideout in which field emission is taken into account. It is observed that the peak in differential resistance and its variation with voltage on such a diode is in reasonable agreement with the theories of Stratton and Padovani, and of Crowell and Rideout. © 1969 The American Institute of Physics.

引用

页码：11 / &

共 11 条

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[6] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
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[7] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS
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[8] SAXENA AN, UNPUBLISHED
[9] SAXENA AN, TO BE PUBLISHED
[10] Schotty W, 1931, PHYS Z, V32, P833

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