SCHOTTKY-BARRIER AND PN-JUNCTION I/V PLOTS - SMALL-SIGNAL EVALUATION

被引：416

作者：

WERNER, JH

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 03期

关键词：

D O I：

10.1007/BF00615935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：291 / 300

页数：10

相关论文

共 20 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
LEPSELTER, MP
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +
[2] DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS
BARNES, PA
PAOLI, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 633 - 639
[3] GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR
BOHLIN, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1223 - 1224
[4] DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE
BROOM, RF
MEIER, HP
WALTER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1832 - 1833
[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[6] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
CHEUNG, SK
CHEUNG, NW
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 85 - 87
[7] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
CHUANG, CT
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (04) : 299 - 304
[8] FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
CIBILS, RM
BUITRAGO, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1075 - 1077
[9] DERIVATIVE MEASUREMENTS OF LIGHT-CURRENT-VOLTAGE CHARACTERISTICS OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS
DIXON, RW
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1976, 55 (07): : 973 - 980
[10] HENISCH HK, 1984, SEMICONDUCTOR CONTAC, pCH3