学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
SCHOTTKY-BARRIER AND PN-JUNCTION I/V PLOTS - SMALL-SIGNAL EVALUATION
被引:416
作者
:
WERNER, JH
论文数:
0
引用数:
0
h-index:
0
WERNER, JH
机构
:
来源
:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
1988年
/ 47卷
/ 03期
关键词
:
D O I
:
10.1007/BF00615935
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:291 / 300
页数:10
相关论文
共 20 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARNES, PA
PAOLI, TL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PAOLI, TL
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1976,
12
(10)
: 633
-
639
[3]
GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR
BOHLIN, KE
论文数:
0
引用数:
0
h-index:
0
BOHLIN, KE
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(03)
: 1223
-
1224
[4]
DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE
BROOM, RF
论文数:
0
引用数:
0
h-index:
0
BROOM, RF
MEIER, HP
论文数:
0
引用数:
0
h-index:
0
MEIER, HP
WALTER, W
论文数:
0
引用数:
0
h-index:
0
WALTER, W
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(05)
: 1832
-
1833
[5]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[6]
EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
CHEUNG, SK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, SK
CHEUNG, NW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, NW
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(02)
: 85
-
87
[7]
ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
CHUANG, CT
论文数:
0
引用数:
0
h-index:
0
CHUANG, CT
[J].
SOLID-STATE ELECTRONICS,
1984,
27
(04)
: 299
-
304
[8]
FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
CIBILS, RM
论文数:
0
引用数:
0
h-index:
0
CIBILS, RM
BUITRAGO, RH
论文数:
0
引用数:
0
h-index:
0
BUITRAGO, RH
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(02)
: 1075
-
1077
[9]
DERIVATIVE MEASUREMENTS OF LIGHT-CURRENT-VOLTAGE CHARACTERISTICS OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
DIXON, RW
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1976,
55
(07):
: 973
-
980
[10]
HENISCH HK, 1984, SEMICONDUCTOR CONTAC, pCH3
←
1
2
→
共 20 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARNES, PA
PAOLI, TL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PAOLI, TL
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1976,
12
(10)
: 633
-
639
[3]
GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR
BOHLIN, KE
论文数:
0
引用数:
0
h-index:
0
BOHLIN, KE
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(03)
: 1223
-
1224
[4]
DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE
BROOM, RF
论文数:
0
引用数:
0
h-index:
0
BROOM, RF
MEIER, HP
论文数:
0
引用数:
0
h-index:
0
MEIER, HP
WALTER, W
论文数:
0
引用数:
0
h-index:
0
WALTER, W
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(05)
: 1832
-
1833
[5]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[6]
EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
CHEUNG, SK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, SK
CHEUNG, NW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, NW
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(02)
: 85
-
87
[7]
ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
CHUANG, CT
论文数:
0
引用数:
0
h-index:
0
CHUANG, CT
[J].
SOLID-STATE ELECTRONICS,
1984,
27
(04)
: 299
-
304
[8]
FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
CIBILS, RM
论文数:
0
引用数:
0
h-index:
0
CIBILS, RM
BUITRAGO, RH
论文数:
0
引用数:
0
h-index:
0
BUITRAGO, RH
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(02)
: 1075
-
1077
[9]
DERIVATIVE MEASUREMENTS OF LIGHT-CURRENT-VOLTAGE CHARACTERISTICS OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
DIXON, RW
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1976,
55
(07):
: 973
-
980
[10]
HENISCH HK, 1984, SEMICONDUCTOR CONTAC, pCH3
←
1
2
→