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FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
被引:66
作者
:
CIBILS, RM
论文数:
0
引用数:
0
h-index:
0
CIBILS, RM
BUITRAGO, RH
论文数:
0
引用数:
0
h-index:
0
BUITRAGO, RH
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1985年
/ 58卷
/ 02期
关键词
:
D O I
:
10.1063/1.336222
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1075 / 1077
页数:3
相关论文
共 5 条
[1]
INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES
DENEUVILLE, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DENEUVILLE, A
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BRODSKY, MH
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1414
-
1421
[2]
MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
NORDE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Technology, University of Uppsala, Uppsala
NORDE, H
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(07)
: 5052
-
5053
[3]
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[4]
SZE M, 1969, PHYSICS SEMICONDUCTO
[5]
SILICIDE FORMATION IN PD-A-SI-H SCHOTTKY BARRIERS
THOMPSON, MJ
论文数:
0
引用数:
0
h-index:
0
THOMPSON, MJ
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
NEMANICH, RJ
论文数:
0
引用数:
0
h-index:
0
NEMANICH, RJ
TSAI, CC
论文数:
0
引用数:
0
h-index:
0
TSAI, CC
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(03)
: 274
-
276
←
1
→
共 5 条
[1]
INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES
DENEUVILLE, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DENEUVILLE, A
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BRODSKY, MH
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1414
-
1421
[2]
MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
NORDE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Technology, University of Uppsala, Uppsala
NORDE, H
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(07)
: 5052
-
5053
[3]
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[4]
SZE M, 1969, PHYSICS SEMICONDUCTO
[5]
SILICIDE FORMATION IN PD-A-SI-H SCHOTTKY BARRIERS
THOMPSON, MJ
论文数:
0
引用数:
0
h-index:
0
THOMPSON, MJ
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
NEMANICH, RJ
论文数:
0
引用数:
0
h-index:
0
NEMANICH, RJ
TSAI, CC
论文数:
0
引用数:
0
h-index:
0
TSAI, CC
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(03)
: 274
-
276
←
1
→