DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS

被引：84

作者：

BARNES, PA ^{[1
]}

PAOLI, TL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1976年 / 12卷 / 10期

关键词：

D O I：

10.1109/JQE.1976.1069050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 639

页数：7

共 14 条

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[5] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

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[6] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

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[7] FUNDAMENTAL AND HARMONIC RESPONSE VOLTAGES OF A SINUSOIDALLY CURRENT-MODULATED IDEAL SEMICONDUCTOR-LASER [J].

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DIXON, RW .

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[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

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[9]

Milnes A. G., 1972, HETEROJUNCTIONS META

[10]

PANISH MB, 1974, APPLIED SOLID STATE, V4, P235

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