DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE

被引：35

作者：

BROOM, RF

MEIER, HP

WALTER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1832 / 1833

页数：2

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共 6 条

[1] OHMIC CONTACTS TO N-TYPE GAAS
BOUDVILLE, WJ
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1192 - 1196
[2] SCHOTTKY-BARRIER DIODES OF MBE-DEPOSITED ANTIMONY ON N AND P GALLIUM-ARSENIDE
CHENG, H
ZHANG, XJ
MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (12) : 1117 - 1122
[3] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
[4] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
STRATTON, R
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &
[5] RHODERICK EH, 1978, METAL SEMICONDUCTOR, P101
[6] SZE SM, 1981, PHYS SEMICONDUCTOR D, P333