High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as Phi(B)=1.13 eV by the current-voltage (I-V) method and Phi(B)=1.27 eV by the capacitance-voltage (C-V) method for the Pt/GaN diode, and Phi(B)=1.11 eV, Phi(B)=0.96 eV, and Phi(B)=1.24 eV by I-V, activation energy (I-V-T), and C-V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n similar to 1.10. (C) 1996 American Institute of Physics.