Nanoscale silicon wires synthesized using simple physical evaporation

被引：353

作者：

Yu, DP ^{[1
]}

Bai, ZG ^{[1
]}

Ding, Y ^{[1
]}

Hang, QL ^{[1
]}

Zhang, HZ ^{[1
]}

Wang, JJ ^{[1
]}

Zou, YH ^{[1
]}

Qian, W ^{[1
]}

Xiong, GC ^{[1
]}

Zhou, HT ^{[1
]}

Feng, SQ ^{[1
]}

机构：

[1] Beijing Univ, Dept Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach, High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 degrees C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. (C) 1998 American Institute of Physics.

引用

页码：3458 / 3460

页数：3