Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C -: art. no. 085210

被引：28

作者：

Park, YD ^{[1
]}

Lim, JD

Suh, KS

Shim, SB

Lee, JS

Abernathy, CR

Pearton, SJ

Kim, YS

Khim, ZG

Wilson, RG

机构：

[1] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32605 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.68.085210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly p-type GaAs:C was ion implanted with Mn at differing doses to produce Mn concentrations in the 1-5 at. % range. In comparison to LT-GaAs and n(+)GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi-LT-(Ga,Mn)As, as well as the extraordinary Hall effect up to the observed magnetic ordering temperature (T-C). Mn ion-implanted p(+)GaAs:C with as-grown carrier concentrations >10(20) cm(-3) show remanent magnetization up to 280 K.

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页数：5

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