High-efficiency 1.3 mu m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

被引:12
作者
Loi, KK [1 ]
Sakamoto, I [1 ]
Mei, XB [1 ]
Tu, CW [1 ]
Chang, WSC [1 ]
机构
[1] MITSUBISHI KASEI CORP,TSUKUBA OPTOELECTR LAB,IBARAKI,OSAKA 30012,JAPAN
关键词
D O I
10.1109/68.491560
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-mu m wavelength, A typical 200-mu m-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW, The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-Omega load termination, When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB Is achieved at 10 mW input optical carrier power, These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 mu m.
引用
收藏
页码:626 / 628
页数:3
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