Integration of Si p-i-n diodes for light emitter and detector with optical waveguides

被引：6

作者：

Yamada, A ^{[1
]}

Sakuraba, M ^{[1
]}

Murota, J ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 1-3期

关键词：

optical interconnection; waveguide; Si; photodiode; light-emitting diode;

D O I：

10.1016/j.mssp.2004.09.108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si p-i-n diodes for light emitters and detectors with optical waveguides have been integrated on silicon-on-insulator (SOI) substrates, and photo detection from the light emitter has been investigated. It is found that photodiode (PD) current at reverse bias is well normalized by the light-emitting diode (LED) current at forward bias. From the comparison between PD characteristics with and without optical waveguide, it is confirmed that increase of the PD current is mainly caused by light incidence, not by thermal effect due to LED heating. This means that the PD current is generated by higher energy photons than the energy bandgap of Si. Therefore, it is concluded that, even for the same structures of PD as LED of Si p-i-n, light emitted from LED is detected by PD. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：435 / 438

页数：4

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