Wet and dry etching of LiGaO2 and LiAlO2

被引：6

作者：

Lee, JW

Pearton, SJ

Abernathy, CR

Zavada, JM

Chai, BLH

机构：

[1] USA,RES OFF,RES TRIANGLE PK,NC 27709

[2] UNIV CENT FLORIDA,CTR RES ELECTROOPT & LASERS,ORLANDO,FL 32816

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 08期

关键词：

D O I：

10.1149/1.1837018

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

LiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in some acid solutions, including HF, at rates between 150 and 40,000 Angstrom/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl-2/Ar or CH4/H-2/Ar under electron cyclotron resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metallorganic/hydride counterparts.

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页码：L169 / L171

页数：3

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