Luminescence behaviour of chemically grown ZnO quantum dots

被引:67
作者
Borgohain, K [1 ]
Mahamuni, S [1 ]
机构
[1] Univ Poona, Dept Phys, Poona 411007, Maharashtra, India
关键词
D O I
10.1088/0268-1242/13/10/017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The luminescent properties of undoped ZnO quantum dots encapsulated in various stabilizing agents have been investigated at room temperature. Stoichiometric as well as non-stochiometric ZnO quantum dots have been prepared by different routes. These studies indicate the importance of OH radical on the surface of ZnO quantum dots. In general, it has been observed that surface defects play an active role in the luminescence behaviour of quantum dots. ZnO quantum dots, doped with copper, have also been studied. Doping Cu in ZnO quantum dots, which have OH radical on its surface, is responsible for quenching green luminescence at 530 nm.
引用
收藏
页码:1154 / 1157
页数:4
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