Diffusion of E centers in germanium predicted using GGA plus U approach

被引:82
作者
Tahini, H. [1 ]
Chroneos, A. [2 ]
Grimes, R. W. [1 ]
Schwingenschloegl, U. [3 ]
Bracht, H. [4 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[3] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia
[4] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany
关键词
AUGMENTED-WAVE METHOD; POINTS; ENERGY;
D O I
10.1063/1.3625939
中图分类号
O59 [应用物理学];
学科分类号
摘要
Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy, E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusion activation energies. (C) 2011 American Institute of Physics. [doi:10.1063/1.3625939]
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页数:3
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共 19 条
[11]   Influence of the exchange screening parameter on the performance of screened hybrid functionals [J].
Krukau, Aliaksandr V. ;
Vydrov, Oleg A. ;
Izmaylov, Artur F. ;
Scuseria, Gustavo E. .
JOURNAL OF CHEMICAL PHYSICS, 2006, 125 (22)
[12]   Accurate prediction of defect properties in density functional supercell calculations [J].
Lany, Stephan ;
Zunger, Alex .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2009, 17 (08)
[13]   Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs [J].
Lany, Stephan ;
Zunger, Alex .
PHYSICAL REVIEW B, 2008, 78 (23)
[14]   SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (04) :1746-1747
[15]   Issues in first-principles calculations for defects in semiconductors and oxides [J].
Nieminen, Risto M. .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2009, 17 (08)
[16]   Rationale for mixing exact exchange with density functional approximations [J].
Perdew, JP ;
Ernzerhof, M ;
Burke, K .
JOURNAL OF CHEMICAL PHYSICS, 1996, 105 (22) :9982-9985
[17]   Improving the convergence of defect calculations in supercells:: An ab initio study of the neutral silicon vacancy -: art. no. 075204 [J].
Probert, MIJ ;
Payne, MC .
PHYSICAL REVIEW B, 2003, 67 (07)
[19]  
Sze S. M, 2006, Semiconductor Devices: Physics and Technology