Dielectric behavior of the system BaSn1-xNbxO3 (x≤0.10) -: art. no. 074103

被引:20
作者
Singh, P
Kumar, D
Parkash, O [1 ]
机构
[1] Banaras Hindu Univ, Inst Technol, Dept Ceram Engn, Varanasi 221005, Uttar Pradesh, India
[2] Banaras Hindu Univ, Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India
关键词
D O I
10.1063/1.1862771
中图分类号
O59 [应用物理学];
学科分类号
摘要
Compositions with x <= 0.10 have been synthesized in the system BaSn1-xNbxO3 by the solid state ceramic method. All the compositions have been found to be single phase solid solution having cubic structure. Lattice parameter for all the compositions remains almost the same. The optical micrographs show that average grain size is < 1 mu m. Dielectric constant and dielectric loss have been measured as a function of frequency (100 Hz-10 MHz) and temperature (300-500 K). Space charge polarization and orientational polarization contribute to the observed dielectric behavior. (C) 2005 American Institute of Physics.
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