Experimental factors controlling analyte ion generation in laser desorption/ionization mass spectrometry on porous silicon

被引:114
作者
Kruse, RA
Li, XL
Bohn, PW
Sweedler, JV
机构
[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Dept Chem, Urbana, IL 61801 USA
[2] Univ Illinois, Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1021/ac010317x
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Desorption/ionization on porous silicon (DIOS) is a relatively new laser desorption/ionization technique for the direct mass spectrometric analysis of a wide variety of samples without the requirement of a matrix. Porous silicon substrates were fabricated using the recently developed nonelectrochemical H2O2-metal-HF etching as a versatile platform for investigating the effects of morphology and physical properties of porous silicon on DIOS-MS performance. In addition, laser wavelength, mode of ion detection, pH, and solvent contributions to the desorption/ionization process were studied. Other porous substrates such as GaAs and GaN, with similar surface characteristics but differing in thermal and optical properties from porous silicon, allowed the roles of surface area, optical absorption, and thermal conductivities in the desorption/ionization process to be investigated. Among the porous semiconductors studied, only porous silicon has the combination of large surface area, optical absorption, and thermal conductivity required for efficient analyte ion generation under the conditions studied. In addition to these substrate-related factors, surface wetting, determined by the interaction of deposition solvent with the surface, and charge state of the peptide were found to be important in determining ion generation efficiency.
引用
收藏
页码:3639 / 3645
页数:7
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