Simulation and characterization of the selective area growth process

被引：49

作者：

Alam, MA ^{[1
]}

People, R ^{[1
]}

Isaacs, E ^{[1
]}

Kim, CY ^{[1
]}

Evans-Lutterodt, K ^{[1
]}

Siegrist, T ^{[1
]}

Pernell, TL ^{[1
]}

Vandenberg, J ^{[1
]}

Sputz, SK ^{[1
]}

Chu, SNG ^{[1
]}

Lang, DV ^{[1
]}

Smith, L ^{[1
]}

Hybertsen, MS ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

关键词：

D O I：

10.1063/1.123915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments. (C) 1999 American Institute of Physics. [S0003-6951(99)02018-5].

引用

页码：2617 / 2619

页数：3

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