A THEORY FOR METALORGANIC VAPOR-PHASE EPITAXIAL SELECTIVE GROWTH ON PLANAR PATTERNED SUBSTRATES

被引:34
作者
FUJII, T
EKAWA, M
YAMAZAKI, S
机构
[1] Fujitsu Laboratories Ltd., Atsugi, 243-01
关键词
D O I
10.1016/0022-0248(94)00498-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We developed a theory for selective area metalorganic vapor phase epitaxy on planar patterned substrates. The theory includes effects of vapor phase diffusion and surface migration. We found that vapor phase effects, such as vapor phase diffusion and readsorption of desorbed source materials, can be included in a two-dimensional surface equation. The surface equation revealed that three surface parameters, which are renormalized by the vapor phase effects, determine the growth rate distribution: diffusion length on the epilayer, diffusion length on the mask, and the lifetime ratio for desorbing and solidifying of the mask and the epilayer. When surface migration has a significant effect, these parameters are independent. If vapor phase diffusion dominates, however, the number of independent parameters is reduced from three to two. Our theory accurately predicted experimental results. Experiments indicated that surface migration has a significant effect.
引用
收藏
页码:475 / 481
页数:7
相关论文
共 11 条
[1]  
AOKI M, 1991, ELECTRON LETT, V27, P2137
[2]   A MATHEMATICAL-MODEL FOR SELECTIVE EPITAXIAL-GROWTH [J].
BOLLEN, LJM ;
VANDENBREKEL, CHJ ;
KUIKEN, HK .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :581-586
[3]   INSITU DEFINITION OF SEMICONDUCTOR STRUCTURES BY SELECTIVE AREA GROWTH AND ETCHING [J].
COLAS, E ;
CANEAU, C ;
FREI, M ;
CLAUSEN, EM ;
QUINN, WE ;
KIM, MS .
APPLIED PHYSICS LETTERS, 1991, 59 (16) :2019-2021
[4]   COMPOSITION OF SELECTIVELY GROWN INXGA1-XAS STRUCTURES FROM LOCALLY RESOLVED RAMAN-SPECTROSCOPY [J].
FINDERS, J ;
GEURTS, J ;
KOHL, A ;
WEYERS, M ;
OPITZ, B ;
KAYSER, O ;
BALK, P .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :151-155
[5]   GAINAS/INP SELECTIVE AREA METALORGANIC VAPOR-PHASE EPITAXY FOR ONE-STEP-GROWN BURIED LOW-DIMENSIONAL STRUCTURES [J].
GALEUCHET, YD ;
ROENTGEN, P ;
GRAF, V .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :560-568
[6]   SELECTIVE-AREA LOW-PRESSURE MOCVD OF GAINASP AND RELATED MATERIALS ON PLANAR INP SUBSTRATES [J].
GIBBON, M ;
STAGG, JP ;
CURETON, CG ;
THRUSH, EJ ;
JONES, CJ ;
MALLARD, RE ;
PRITCHARD, RE ;
COLLIS, N ;
CHEW, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :998-1010
[7]  
KATO T, 1991, ECOC
[8]  
KOBAYASHI H, UNUB IEEE PHOTON LET
[9]   TAPERED WAVE-GUIDE INGAAS/INGAASP MULTIPLE-QUANTUM-WELL LASERS [J].
KOCH, TL ;
KOREN, U ;
EISENSTEIN, G ;
YOUNG, MG ;
ORON, M ;
GILES, CR ;
MILLER, BI .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) :88-90
[10]  
SASAKI T, 1993, IPRM, P44