COMPOSITION OF SELECTIVELY GROWN INXGA1-XAS STRUCTURES FROM LOCALLY RESOLVED RAMAN-SPECTROSCOPY

被引：52

作者：

FINDERS, J ^{[1
]}

GEURTS, J ^{[1
]}

KOHL, A ^{[1
]}

WEYERS, M ^{[1
]}

OPITZ, B ^{[1
]}

KAYSER, O ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90448-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The composition of In(x)Ga(1-x)As stripes of different width, selectively grown by low pressure MOVPE or MOMBE, was determined from the eigenfrequency of the Ga-As lattice vibration using Raman spectroscopy. In contrast to MOMBE, structures grown by MOVPE show a strong enhancement of the In content with decreasing width and increasing distances between the stripes. Comparative studies on MOVPE grown In(x)Ga(1-x)P structures indicate a behavior similar to that observed in the case of In(x)Ga(1-x)As.

引用

页码：151 / 155

页数：5

共 8 条

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