SELECTIVE GROWTH OF INP/GAINAS IN LP-MOVPE AND MOMBE/CBE

Based on data from the literature and from our own laboratory this paper gives a critical review of the growth mechanisms in selective MOMBE and MOVPE of InP and GaInAs on partially masked substrates. In addition to the selectivity the geometry of the structures and the composition of the ternaries are discussed. The comparison of both techniques allows a clear separation of surface and gas phase effects. The strong correlation between surface and gas phase reactions and the shape of selectively grown structures is demonstrated. Finally, the requirements to achieve optimum control of the selective growth process are adressed.