Real-time STM study of inter-nanowire reactions:: GdSi2 nanowires on Si(100)

被引：16

作者：

Harrison, BC

Boland, JJ ^{[1
]}

机构：

[1] Trinity Coll Dublin, Dept Chem, Dublin 2, Ireland

[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

来源：

SURFACE SCIENCE | 2005年 / 594卷 / 1-3期

基金：

爱尔兰科学基金会;

关键词：

silicide; nanowires; rare-earth; silicon (100); orthorhombic; hexagonal;

D O I：

10.1016/j.susc.2005.07.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the co-existence and growth of two different types of GdSi2 nanowires (NWs) following Gd deposition on the Si(100) surface. The first NW type is hexagonal and similar in appearance and orientation to that previously reported in the literature. The structure of the second NW type is unknown, but its orientation, thermodynamic stability and surface appearance are consistent with an orthorhombic structure. Real-time high-temperature STM studies show that these new NWs are thermodynamically preferred and in regions where both wires co-exist, they grow at the expense of their hexagonal counterparts. The implications of these observations for nanoscale interconnects is discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：93 / 98

页数：6

共 20 条

[1] Modeling cross-hatch surface morphology in growing mismatched layers [J].