Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

被引:34
作者
Chen, G [1 ]
Wan, J [1 ]
Yang, JS [1 ]
Ding, XM [1 ]
Ye, L [1 ]
Wang, X [1 ]
机构
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
lanthanides; silicides; surface relaxation and reconstruction; metal-semiconductor interfaces; epitaxy; surface energy;
D O I
10.1016/S0039-6028(02)01705-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface structures of thin erbium silicide layers formed on Si(1 0 0) substrate by solid phase epitaxy are studied by using the in situ high energy electron diffraction, low energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and ex situ grazing X-ray diffraction. Nanowires and nanoislands of Er silicide coexist on the Si substrate surface and a c(2 x 2) reconstruction is observed on the top of these nanostructures. The crystalline structure of the Er silicide nanostructure is found to be tetragonal ErSi2. A Si-adatom model for the c(2 x 2) reconstruction is proposed. The total energy calculation based on the discrete-variational self-consistent multipolar cluster method identifies that the hollow site Si adatom model might be the most energetically favorable one. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:203 / 210
页数:8
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