共 19 条
Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)
被引:34
作者:
Chen, G
[1
]
Wan, J
[1
]
Yang, JS
[1
]
Ding, XM
[1
]
Ye, L
[1
]
Wang, X
[1
]
机构:
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
基金:
中国国家自然科学基金;
关键词:
lanthanides;
silicides;
surface relaxation and reconstruction;
metal-semiconductor interfaces;
epitaxy;
surface energy;
D O I:
10.1016/S0039-6028(02)01705-3
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The surface structures of thin erbium silicide layers formed on Si(1 0 0) substrate by solid phase epitaxy are studied by using the in situ high energy electron diffraction, low energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and ex situ grazing X-ray diffraction. Nanowires and nanoislands of Er silicide coexist on the Si substrate surface and a c(2 x 2) reconstruction is observed on the top of these nanostructures. The crystalline structure of the Er silicide nanostructure is found to be tetragonal ErSi2. A Si-adatom model for the c(2 x 2) reconstruction is proposed. The total energy calculation based on the discrete-variational self-consistent multipolar cluster method identifies that the hollow site Si adatom model might be the most energetically favorable one. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码:203 / 210
页数:8
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