EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF ERBIUM SILICIDE FORMED ON (100)SI THROUGH A SOLID-PHASE REACTION

被引：23

作者：

LEE, YK ^{[1
]}

FUJIMURA, N ^{[1
]}

ITO, T ^{[1
]}

ITOH, N ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI 593,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 134卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90133-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth and structural characterization of epitaxial erbium silicide on the (100)Si substrate are studied by transmission electron microscopy, reflection high-energy electron diffraction, and X-ray diffractometry. Erbium silicides (ErSi2-x) grow by annealing above 400-degrees-C after the deposition of Er film. The ErSi2-x film consists of two types of domains which have two different azimuthal orientations making an angle of 90-degrees to each other. The epitaxial relationships between the hexagonal ErSi2-x film and the (100)Si substrate are [0001]ErSi2-x parallel-to [011BAR]Si and [0001]ErSi2-x parallel-to [011BAR]Si in the (1100BAR)ErSi2-x parallel-to (100)Si plane relation. The two types of domains in the ETSi2-x film are equivalent in volume fraction and crystalline quality, which has been proved from the equivalent integrated intensities of (2201BAR) asymmetric reflection of X-ray diffraction.

引用

页码：247 / 254

页数：8

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