EPITAXIAL YTTRIUM SILICIDE ON (111) SILICON BY VACUUM ANNEALING

被引:38
作者
GURVITCH, M
LEVI, AFJ
TUNG, RT
NAKAHARA, S
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D O I
10.1063/1.98453
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O59 [应用物理学];
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页码:311 / 313
页数:3
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