Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

被引：54

作者：

Son, Dong Ick ^{[1
]}

You, Chan Ho ^{[2
]}

Jung, Jae Hun ^{[2
]}

Kim, Tae Whan ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Informat Display Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

关键词：

carrier mobility; colloids; II-VI semiconductors; indium compounds; nanocomposites; organic-inorganic hybrid materials; polymers; random-access storage; semiconductor quantum dots; spin coating; tin compounds; zinc compounds; MEMORY; BISTABILITY; EMISSION;

D O I：

10.1063/1.3454774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic bistable devices (OBDs) fabricated utilizing ZnO quantum dots (QDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated by using a spin-coating technique. Transmission electron microscopy images revealed that 5-nm-diameter ZnO QDs were formed inside the PMMA polymer layer. Current-voltage (I-V) measurements on Al/ZnO QDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBDs was as large as 4x10(4). Carrier transport mechanisms for the OBDs are described by using several models to fit the experimental I-V data. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3454774]

引用

页数：3

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