Charging phenomena in pentacene-gold nanoparticle memory device

被引：146

作者：

Leong, W. L.

Lee, P. S.

Mhaisalkar, S. G.

Chen, T. P.

Dodabalapur, A.

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Univ Texas, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.2435598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles. (c) 2007 American Institute of Physics.

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页数：3

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