Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles

被引：337

作者：

Bozano, LD

Kean, BW

Beinhoff, M

Carter, KR

Rice, PM

Scott, JC

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[2] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

[3] Max Planck Inst Colloids & Interfaces, D-14424 Potsdam, Germany

[4] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2005年 / 15卷 / 12期

关键词：

D O I：

10.1002/adfm.200500130

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Non-volatile solid-state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.

引用

页码：1933 / 1939

页数：7

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