Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

被引：37

作者：

Waki, I

Kumtornkittikul, C

Shimogaki, Y

Nakano, Y

机构：

[1] Univ Tokyo, Sch Engn, JST CREST, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, JST CREST, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1586473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent interfaces of the MQWs are confirmed by these measurements. The strong intersubband absorption peak at a wavelength of 1.68 m m is achieved for AlN (1.6 nm)/GaN(1.7 nm) MQW. The full width at half-maximum of the absorption peak is estimated to be 27 meV. (C) 2003 American Institute of Physics.

引用

页码：4465 / 4467

页数：3

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