A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering

被引：63

作者：

Sheng, LY

Tang, ZN

Wu, J

Chan, PCH ^{[1
]}

Sin, JKO

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong

[2] Dalian Univ Technol, Dalian, Peoples R China

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 49卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

integrated gas sensor; maskless tin oxide sputtering; lower power;

D O I：

10.1016/S0925-4005(98)00092-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper describes a CMOS compatible integrated gas sensor. The device was designed so that the front-end fabrication is fully compatible with the standard CMOS process. The non-CMOS compatible fabrication steps were carried out as post-processing steps. This included the silicon anisotropic etch to create the thermally isolated micro-hotplate (MHP) and the deposition of gas-sensitive thin films using maskless r.f. SnO2 sputtering. The sensors exhibited high sensitivities to gases, such as ethanol and hydrogen. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：81 / 87

页数：7

共 11 条

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