Internal quantum efficiency for solar cells

被引:83
作者
Yang, W. J. [1 ]
Ma, Z. Q. [1 ]
Tang, X. [1 ]
Feng, C. B. [1 ]
Zhao, W. G. [1 ]
Shi, P. P. [1 ]
机构
[1] Shanghai Univ, Microelect Grp, Shanghai 200444, Peoples R China
关键词
flat band; homo-junction; spectral response; internal quantum efficiency; texturization;
D O I
10.1016/j.solener.2007.07.010
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The total internal quantum efficiency (IQE) of a flat-band p-n homojunction silicon solar cell and contributions of the three regions to it are numerically evaluated. It is found that both the spatial widths of the cell and the surface recombination velocities have significant impacts on the IQEs. By a linear transformation and a proper approximation, the differential equation of the minority carrier density in a textured cell becomes the same form as for the flat cell. What makes differences is that texturization slightly enhances the IQEs for photons with longer wavelengths while notably increasing external quantum efficiency. Hence it plays a good role for getting a better performance of a solar cell. It is considered that the results in the present are of universal technical importance both in designing solar cells and their surface structures. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:106 / 110
页数:5
相关论文
共 7 条
[1]   Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement [J].
Brendel, R ;
Hirsch, M ;
Plieninger, R ;
Werner, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (07) :1104-1113
[2]  
Fonash Stephen., 1981, Solar cell device physics
[3]  
GREEN MA, 1987, HIGH EFFICIENCY SILI
[4]  
Moller H.J., 1993, Semiconductors for Solar Cells
[5]   MEASUREMENT OF DIFFUSION LENGTH IN SOLAR CELLS [J].
REYNOLDS, JH ;
MEULENBERG, A .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2582-2592
[6]  
Sze S.M., 2013, SEMICONDUCTOR DEVICE
[7]  
Wolf M., 1958, P IEEE, V18, P583